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| CMLD3003DO SURFACE MOUNT PICOminiTM DUAL, ISOLATED, OPPOSING LOW LEAKAGE SILICON SWITCHING DIODES Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD3003DO type contains Two (2) Isolated Opposing Configuration, Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a PICOminiTM surface mount package. These devices are designed for switching applications requiring extremely low leakage. MARKING CODE: C30 SOT-563 CASE MAXIMUM RATINGS: (TA=25C) Continuous Reverse Voltage Average Rectified Current Continuous Forward Current Peak Repetitive Forward Current Forward Surge Current, tp=1 sec. Forward Surge Current, tp=1 sec. Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VR IO IF IFRM IFSM IFSM PD TJ,Tstg JA 180 200 600 700 2.0 1.0 250 -65 to +150 500 UNITS V mA mA mA A A mW C C/W SYMBOL IR IR IR IR BVR VF VF VF VF VF VF CT ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25C unless otherwise noted) TEST CONDITIONS MIN MAX VR=125V VR=125V, TA=150C VR=180V VR=180V, TA=150C IR=5.0A IF=1.0mA IF=10mA IF=50mA IF=100mA IF=200mA IF=300mA VR=0, f=1 MHz 200 0.62 0.72 0.80 0.83 0.87 0.90 0.72 0.83 0.89 0.93 1.10 1.15 4.0 1.0 3.0 10 5.0 UNITS nA A nA A V V V V V V V pF R0 (07-June 2004) Central TM CMLD3003DO SURFACE MOUNT PICOminiTM DUAL, ISOLATED, OPPOSING LOW LEAKAGE SILICON SWITCHING DIODES Semiconductor Corp. SOT-563 CASE - MECHANICAL OUTLINE D A 6 E 5 E 4 B G F 1 2 3 C H R0 LEAD CODE: 1) ANODE D1 2) NC 3) CATHODE D2 4) ANODE D2 5) NC 6) CATHODE D1 MARKING CODE: C30 Dual Opposing Configuration R0 (07-June 2004) |
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